HGTP 10N120BN
Κωδικός προϊόντος: 100.105.0054Διαθεσιμότητα: Διαθέσιμο
35a 298w 1200v mosfet n-channel IGBT to-220
Τιμή: 4,00 €
Spesifications:
- Product Category: IGBT Transistors
- Technology: Si
- Package/Case: TO-220-3
- Mounting Style: Through Hole
- Configuration: Single
- Collector- Emitter Voltage VCEO Max: 1.2 kV
- Collector-Emitter Saturation Voltage: 2.45 V
- Maximum Gate Emitter Voltage: - 20 V, 20 V
- Continuous Collector Current at 25 C: 35 A
- Pd - Power Dissipation: 298 W
- Minimum Operating Temperature: - 55 C
- Maximum Operating Temperature: + 150 C
- Series: HGTP10N120BN
- Continuous Collector Current: 35 A
- Continuous Collector Current Ic Max: 35 A
- Gate-Emitter Leakage Current: +/- 250 nA
- Height: 9.4 mm
- Length: 10.67 mm
- Product Type: IGBT Transistors
- Subcategory: IGBTs
- Width: 4.83 mm
HGTP 10N120BN
Αρχείο τύπου: pdf
Κατασκευαστής: n/a Κατηγορία: HGTP
