IGW 40N60
Κωδικός προϊόντος: 100.105.0033Διαθεσιμότητα: Διαθέσιμο
IGBT Transistors 600V 40A 306W
Τιμή: 6,00 €
Spesifications:
- Manufacturer: Infineon
- Manufacturer: Infineon
- Product Category: IGBT Transistors
- RoHS: Details
- Technology: Si
- Package/Case: TO-247-3
- Mounting Style: Through Hole
- Configuration: Single
- Collector- Emitter Voltage VCEO Max: 600 V
- Collector-Emitter Saturation Voltage: 1.95 V
- Maximum Gate Emitter Voltage: 20 V
- Continuous Collector Current at 25 C: 80 A
- Pd - Power Dissipation: 306 W
- Minimum Operating Temperature: - 40 C
- Maximum Operating Temperature: + 175 C
- Series: HighSpeed 3
- Brand: Infineon Technologies
- Gate-Emitter Leakage Current: 100 nA
- Product Type: IGBT Transistors
- Subcategory: IGBTs
- Tradename: TRENCHSTOP
- Part # Aliases: IGW40N60H3FKSA1 SP000769926 IGW4N6H3XK IGW40N60H3FKSA1
- Unit Weight: 6,500 g
IGW 40N60
Αρχείο τύπου: pdf
Κατασκευαστής: n/a Κατηγορία: IGW
