2N 5401
Κωδικός προϊόντος: 100.102.0808Διαθεσιμότητα: Διαθέσιμο
Bipolar Transistors - BJT PNP Gen Pr Amp
Τιμή: 1,50 €
Spesifications:
- Product Category: Bipolar Transistors - BJT
- Product Category: Bipolar Transistors - BJT
- RoHS: Details
- Mounting Style: Through Hole
- Package/Case: TO-92-3
- Transistor Polarity: PNP
- Configuration: Single
- Collector- Emitter Voltage VCEO Max: 150 V
- Collector- Base Voltage VCBO: 160 V
- Emitter- Base Voltage VEBO: 5 V
- Collector-Emitter Saturation Voltage: 0.2 V
- Pd - Power Dissipation: 1.5 W
- Gain Bandwidth Product fT: 300 MHz
- Minimum Operating Temperature: - 65 C
- Maximum Operating Temperature: + 150 C
- Series: 2N54
- DC Current Gain hFE Max: 240 at 10 mA, 5 V
- Technology: Si
- Continuous Collector Current: 600 mA
- DC Collector/Base Gain hFE Min: 60 at 10 mA, 5 V
- Product Type: BJTs - Bipolar Transistors
- Subcategory: Transistors
- Unit Weight: 453,600 mg
2N 5401
Αρχείο τύπου: pdf
Κατασκευαστής: n/a Κατηγορία: 2N
