IRF 610
Κωδικός προϊόντος: 100.105.0039Διαθεσιμότητα: Διαθέσιμο
Mosfet 200v 3.3a n-channel
Τιμή: 1,50 €
Spesifications:
- Manufacturer: Vishay
- Manufacturer: Vishay
- Product Category: MOSFET
- RoHS: Details
- Technology: Si
- Mounting Style: Through Hole
- Package/Case: TO-220-3
- Transistor Polarity: N-Channel
- Number of Channels: 1 Channel
- Vds - Drain-Source Breakdown Voltage: 200 V
- Id - Continuous Drain Current: 3.3 A
- Rds On - Drain-Source Resistance: 1.5 Ohms
- Vgs - Gate-Source Voltage: - 20 V, + 20 V
- Vgs th - Gate-Source Threshold Voltage: 2 V
- Qg - Gate Charge: 8.2 nC
- Minimum Operating Temperature: - 55 C
- Maximum Operating Temperature: + 150 C
- Pd - Power Dissipation: 36 W
- Channel Mode: Enhancement
- Series: IRF
- Transistor Type: 1 N-Channel
- Brand: Vishay Semiconductors
- Forward Transconductance - Min: 0.8 S
- Fall Time: 8.9 ns
- Product Type: MOSFET
- Rise Time: 17 ns
- Subcategory: MOSFETs
- Typical Turn-Off Delay Time: 14 ns
- Typical Turn-On Delay Time: 8.2 ns
- Unit Weight: 6 g
IRF 610
Αρχείο τύπου: pdf
Κατασκευαστής: n/a Κατηγορία: IRF
