AP65WN2K3
Κωδικός προϊόντος: 100.105.0044Διαθεσιμότητα: Διαθέσιμο
Mosfet 31.2w 4a 650v n-channel.
Τιμή: 1,50 €
Spesifications:
- Type Designator: AP65WN2K3I
- Type Designator: AP65WN2K3I
- Type of Transistor: MOSFET
- Type of Control Channel: N -Channel
- Maximum Power Dissipation (Pd): 31.2 W
- Maximum Drain-Source Voltage |Vds|: 650 V
- Maximum Gate-Source Voltage |Vgs|: 30 V
- Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
- Maximum Drain Current |Id|: 4 A
- Maximum Junction Temperature (Tj): 150 °C
- Rise Time (tr): 17 nS
- Drain-Source Capacitance (Cd): 35 pF
- Maximum Drain-Source On-State Resistance (Rds): 2.29 Ohm
- Package: TO220F
AP65WN2K3
Αρχείο τύπου: pdf
Κατασκευαστής: n/a Κατηγορία: AP
